Browsing by Subject "Carrier relaxation"
Now showing items 1-11 of 11
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Carrier dynamics in Β-Ga2O3 nanowires
(2010)Carrier dynamics have been investigated in Β-Ga2O 3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting ...
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Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Article
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Article
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Article
Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells
(2009)We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. ...
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Article
Long-Lived Hot Carriers in Formamidinium Lead Iodide Nanocrystals
(2017)The efficient harvesting of hot carrier energy in semiconductors is typically inhibited by their ultrafast thermalization process. Recently, highly promising experiments reported on the slowdown of the intraband relaxation ...
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Surface-related states in oxidized silicon nanocrystals enhance carrier relaxation and inhibit auger recombination
(2008)We have studied ultrafast carrier dynamics in oxidized silicon nanocrystals (NCs) and the role that surface-related states play in the various relaxation mechanisms over a broad range of photon excitation energy corresponding ...
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Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
(2011)Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination ...
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Article
Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
(2011)Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination ...
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Article
Ultrafast time-resolved spectroscopy of Si nanocrystals embedded in SiO2 matrix
(2009)In this work, we present a comprehensive study of ultrafast transient photoinduced absorption of silicon nanocrystals (NCs) embedded in SiO2 matrix. The samples under investigation are single monolayers of Si-NCs embedded ...